WebWe present the progress on deep etching of InP for the fabrication of DBR gratings in Photonic Integrated Circuits (PICs). Various etching chemistries were investigated using an Inductively Coupled Plasma (ICP) etching system. It is shown how the different process settings determine the etched profile and sidewall roughness. WebIntroduction Dry etching processes are widely used in the fabrication of Photonic Integrated Circuits (PICs) in InP. New devices like Distributed Bragg Reflector (DBR) gratings and …
Optimization of inductively coupled plasma …
WebMar 25, 2024 · The present results indicate that wet etching using TMAH is a key technique in forming vertical mirror facets of AlGaN-based UV-C LDs. Nevertheless, even with highly vertical mirror facets, we could not … WebDry etching of TiO 2 /SiO 2 DBR mirrors for tunable optical sensor arrays. Advanced Fabrication Technologies for Micro/Nano Optics and Photonics III. doi:10.1117/12.841881 . ernest whitley evansdale nc
High efficiency DBR assisted grating chirp generators for …
WebSep 1, 2001 · At a selectivity of about 20 etch depths of more than 3 μm are possible which is sufficient for etching through a whole laser structure. As an example, in Fig. 3 a deeply etched DBR structure is shown with 150 nm air-gaps, 550 nm grating period and an etch depth of 4.55 μm outside and 2.3 μm at the center of the 7-μm broad cross section ... WebThe dry etching of the top DBR is performed using SiCl4 and Ar and it results in vertical sidewalls which are damaged or contaminated by the plasma but they are still carbon free. WebDBR. After the mesa dry etching, the SiO 2 mask was removed by wet etching using HF solution. The etching of InGaAs layers to form the airgap was conducted by wet chemical selective etching using a H 2SO 4:H 2O 2:H 2O ¼ 1:1:2 solution. The solution has a good etching selectivity for InP and InGaAs and three times higher etching rate than the ... fine dining restaurant chicago